MKI100-12F8【PDF 1/2 页】MOD IGBT H-BRIDGE 1200V 125A E3

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Advanced Technical Information

MKI 100-12F8

IGBT Modules

I C25

= 125 A

V CES

H Bridge

Short Circuit SOA Capability

Square RBSOA

13, 21

= 1200 V

V CE(sat) typ. = 3.3 V

14, 20

MKI

IGBTs

Features

? Fast NPT IGBTs

Symbol

Conditions

Maximum Ratings

- low saturation voltage

V CES

V GES

I C25

I C80

I CM

V CEK

t SC

T VJ = 25°C to 150°C

T C = 25°C

T C = 80°C

V GE = ± 15 V; R G = 5.6 ? ; T VJ = 125°C

RBSOA; clamped inductive load; L = 100 μH

V CE = 900 V; V GE = ± 15 V; R G = 5.6 ? ; T VJ = 125°C

SCSOA; non-repetitive

1200

± 20

125

200

V CES

μs

- positive temperature coefficient for

easy paralleling

- fast switching

- short tail current for optimized

performance also in resonant circuits

? HiPerFRED TM diode:

- fast reverse recovery

- low operating forward voltage

- low leakage current

? Industry Standard Package

- solderable pins for PCB mounting

- isolated copper base plate

P tot

T C = 25°C

640

Typical Applications

Symbol

Conditions

Characteristic Values

(T VJ = 25 ° C, unless otherwise specified)

min. typ. max.

- motor control

. DC motor amature winding

V CE(sat)

V GE(th)

I C = 100 A; V GE = 15 V; T VJ = 25°C

T VJ = 125°C

I C = 4 mA; V GE = V CE

4.5

3.3

4.0

3.9

6.5

. DC motor excitation winding

. synchronous motor excitation winding

- supply of transformer primary winding

. power supplies

I CES

I GES

V CE = V CES ; V GE = 0 V;

V CE = 0 V; V GE = ± 20 V

T VJ = 25°C

T VJ = 125°C

4.0

1.3

600

. welding

. X-ray

. battery charger

t d(on)

130

t r

t d(off)

t f

E on

E off

C ies

Q Gon

R thJC

Inductive load, T VJ = 125°C

V CE = 600 V; I C = 100 A

V GE = ±15 V; R G = 5.6 ?

V CE = 25 V; V GE = 0 V; f = 1 MHz

V CE = 600 V; V GE = ± 15 V; I C = 100 A

(per IGBT)

365

12.0

5.0

6.5

1.1

μC

0.19 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

1-2

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